Chin C. Lee
Professor, Electrical Engineering and Computer Science
The Henry Samueli School of Engineering
The Henry Samueli School of Engineering
Director of Operations, Integrated Nanosystems Research Facility
The Henry Samueli School of Engineering
The Henry Samueli School of Engineering
PH.D., Carnegie-Mellon University
University of California, Irvine
2226 EG
Mail Code: 2625
Irvine, CA 92697-2625
2226 EG
Mail Code: 2625
Irvine, CA 92697-2625
Research Interests
Electronic Packaging, Fluxless Bonding Technology, Thermal Analysis and Design of Electronic Devices, Magnetostatic Microwave Devices, Integrated Optics
Research Abstract
(A) Electrical and Thermal Studies of AlGaN/GaN Heterojunction Field-effect Transistors and InGaN/GaN Light Emitting devices:
(B) Magnetostatic Microwave Devices:
Passive devices such as norch filters are built on single crystal iron film grown on GaAs by molecular beam epitaxy. The iron film has very large ferromagnetic effect (i.e. permanent magnatization) and thus enables high frequency megnetostatic waves (spin waves) to be generated with relatively low DC magnetic field. As a result, the center frequency of the device can be tuned over a wide frequency range with relatively low DC field. Present microwave equipment can measure up to 50GHz. Device tuning range from 11 GHz to 35GHz has been measured.
(C) Fluxless Oxidation-Free Bonding Technology:
The objective is to invent and develop new bonding technology for electronic and photonic devices and packages. Several fluxless techniques have been formulated to produce nearly void-free joints including: bonding gallium arsenide (GaAs) dice using gold-tin eutectic alloy, bonding large silicon dice using gold-tin alloy, bonding GaAs dice using multiple layers of gold and tin deposited on the back side of the wafer without using gold tin preforms, bonding GaAs dice on copper substrates using multilayer indium-gold composite. We have also bonded Si to glass. Recently, a new fluxless process has been developed using Cr/In/Au multilayer composite. This process requires a process temperature of only 200 degrees C but the resulting joints have a re-melting temperature of 460 degrees C. Very high temperature joints, i.e., up to 700 degrees C, have also been fabricated using Ag-In, Ag-Sn, Cu-In and Cu-Sn alloys at low processing temperatures. To produce soft solder joints, Pb/In/Au multilayer composite has been studied. Most recently, fluxless oxidation-free bonding processes have been developed using Sn-Pb, Sn-In, Sn-Cu, Sn-Ag, In-Cu, and In-Ag systems for a wide variety of applications. With proper design, the Sn-Cu, In-Cu, Sn-Ag, and In-Ag processes can achieve a re-melting temperature of the joint that is significantly higher than the process temperature. Scanning acoustic microscopy (SAM) is used to examine the bonding quality and scanning election microscopy with EDX is used to study the composition and grain distribution and microstructure of the joints. All the processes developed are entirely fluxless, i.e., no flux needed during bonding.
(D) Integrated Optics Devices
Optical waveguides, both planar and channel, have been fabricated on glass substrates using a new dry film transverse electro-migration (TEM). Extremely low-loss, 0.1dB/cm at 632.8nm wavelengh, has been achieved. Major applications of the waveguide include fiber optics and bio-sensors.
(F) Thermal Analysis and Design for Electronic Devices:
In-house thermal analysis and design software "PAMIE" has been developed based on analytical solution of five-layer structure with embedded sources. Another software "UNITHERM" using the concept of unit thermal profile approach has also been written to deal with the devices that have a large number of heat sources such as integrated circuit (IC) devices. PAMIE and UNITHERM are most powerful in carrying out real-time thermal design of ICs on the chip level and of devices that can be reduced to five-layer structure. They have been used to analyze the thermal performance of the microwave GaAs analog ICs designed by ITT Defense Electronics. In the package level and printed circuit board (PCB) level, finite element analysis tools are employed. We have analyzed the complete model that includes the chip, the package and the PCB. The models established using up to 50,000 elements. Both transient and steady state analyses can be performed.
(B) Magnetostatic Microwave Devices:
Passive devices such as norch filters are built on single crystal iron film grown on GaAs by molecular beam epitaxy. The iron film has very large ferromagnetic effect (i.e. permanent magnatization) and thus enables high frequency megnetostatic waves (spin waves) to be generated with relatively low DC magnetic field. As a result, the center frequency of the device can be tuned over a wide frequency range with relatively low DC field. Present microwave equipment can measure up to 50GHz. Device tuning range from 11 GHz to 35GHz has been measured.
(C) Fluxless Oxidation-Free Bonding Technology:
The objective is to invent and develop new bonding technology for electronic and photonic devices and packages. Several fluxless techniques have been formulated to produce nearly void-free joints including: bonding gallium arsenide (GaAs) dice using gold-tin eutectic alloy, bonding large silicon dice using gold-tin alloy, bonding GaAs dice using multiple layers of gold and tin deposited on the back side of the wafer without using gold tin preforms, bonding GaAs dice on copper substrates using multilayer indium-gold composite. We have also bonded Si to glass. Recently, a new fluxless process has been developed using Cr/In/Au multilayer composite. This process requires a process temperature of only 200 degrees C but the resulting joints have a re-melting temperature of 460 degrees C. Very high temperature joints, i.e., up to 700 degrees C, have also been fabricated using Ag-In, Ag-Sn, Cu-In and Cu-Sn alloys at low processing temperatures. To produce soft solder joints, Pb/In/Au multilayer composite has been studied. Most recently, fluxless oxidation-free bonding processes have been developed using Sn-Pb, Sn-In, Sn-Cu, Sn-Ag, In-Cu, and In-Ag systems for a wide variety of applications. With proper design, the Sn-Cu, In-Cu, Sn-Ag, and In-Ag processes can achieve a re-melting temperature of the joint that is significantly higher than the process temperature. Scanning acoustic microscopy (SAM) is used to examine the bonding quality and scanning election microscopy with EDX is used to study the composition and grain distribution and microstructure of the joints. All the processes developed are entirely fluxless, i.e., no flux needed during bonding.
(D) Integrated Optics Devices
Optical waveguides, both planar and channel, have been fabricated on glass substrates using a new dry film transverse electro-migration (TEM). Extremely low-loss, 0.1dB/cm at 632.8nm wavelengh, has been achieved. Major applications of the waveguide include fiber optics and bio-sensors.
(F) Thermal Analysis and Design for Electronic Devices:
In-house thermal analysis and design software "PAMIE" has been developed based on analytical solution of five-layer structure with embedded sources. Another software "UNITHERM" using the concept of unit thermal profile approach has also been written to deal with the devices that have a large number of heat sources such as integrated circuit (IC) devices. PAMIE and UNITHERM are most powerful in carrying out real-time thermal design of ICs on the chip level and of devices that can be reduced to five-layer structure. They have been used to analyze the thermal performance of the microwave GaAs analog ICs designed by ITT Defense Electronics. In the package level and printed circuit board (PCB) level, finite element analysis tools are employed. We have analyzed the complete model that includes the chip, the package and the PCB. The models established using up to 50,000 elements. Both transient and steady state analyses can be performed.
Publications
Chin C. Lee and Arthur L. Palisoc, "Real-Time Thermal Design of Integrated Circuit Devices," IEEE Trans. Components, Hybrids, and Manufacturing Technology, 11, pp. 485-492, December 1988.
Chin C. Lee, Mike Lahham and Bill G. Martin, "Experimental Verification of the Kramers-Kronig Relationship for Acoustic Waves," IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control, 37, pp. 286-294, July 1990.
Mark M. Minot and Chin C. Lee, "A New Guided-Wave Lens Structure," IEEE J. Lightwave Technology, 8, pp. 1856-1865, December 1990.
Chin C. Lee, Chen Y. Wang and Goran Matijasevic, "A New Bonding Technology Using Gold and Tin Multilayer Composite Structures," IEEE Trans. Componenst, Hybrids, and Manufacturing Tech., 14, pp.407-412, June 1990.
Yi-Chia Chen and Chin C. lee, "Indium-copper Multilayer Composites for Fluxless Oxidation-free Bonding," Thin Solid Films, 283, pp.243-246, Aug./Sept. 1996.
Dave H. Chien, Chin C. Lee, Mike Rachlin, Andy Peake, and Thomas Kole, "Thermal Analysis of Packaged GaAs Devices Using Chip Model with Finite Element Method," International J. Microcircuits and Electronic Packaging, March 1997.
William S. So and Chin C. Lee, "A Fluxless Process of Fabricating In-Au Joints on Copper Substrates," IEEE Trans. Components and Packaging Technology, 23, pp. 377-382, June 2000.
Chin C. Lee and William S. So, "High Temperature Silver-Indium Joints Manufactured at Low Temperature," Thin Solid Films, 366, pp.196-201, 2000.
Chin C. Lee, W. Wu and Chen S. Tsai, "Ferromagnetic Resonance and Microstructrual Studies of Ultrathin Fe/Ag films-GaAs Waveguide Structures," J. Applied Physics, 91, May, 2002.
Ricky Chuang and Chin C. Lee, "Low Loss Deep Glass Waveguides Produced with Dry-Silver Electromigration," IEEE J. Lightwave Technology, June 2002.
Chin C. Lee and Ricky Chuang, "Fluxless Non-eutectic Joints Fabricated Using Gold-Tin Multilayer Composites," IEEE Trans. Components and Packaging Technology, 26, pp. 416-422, June 2003.
Dongwook Kim and Chin C. Lee, "Intermetallic Growth and Properties in Bi-Sn-Au Thin Film Structure Deposited in High Vacuun," materials Letters, 57, pp.3598-3601, 2003.
Jeong Park, Moowhan Shin, and Chin C. Lee, "Temperature Profiles Measurement on Visible Light Emitting Diodes Using Nematic Liquid Crystal and IR Laser," Optics Letters, Sept. 2004.
Jeong Park, Moowhan Shin, and Chin C. Lee, "Thermal Modeling and Measurement if FETs Built on Sapphire and SiC Substrates," IEEE Trans. Electron Devices, Nov. 2004.
Dongwook Kim and Chin C. Lee, "Intermetallic Growth and Properties in Bi-Sn-Au Thin Film Structure Deposited in High Vacuun," materials Letters, 57, pp.3598-3601, 2003.
Jeong Park, Moowhan Shin, and Chin C. Lee, "Temperature Profiles Measurement on Visible Light Emitting Diodes Using Nematic Liquid Crystal and IR Laser," Optics Letters, Sept. 2004.
Jeong Park, Moowhan Shin, and Chin C. Lee, "Thermal Modeling and Measurement if FETs Built on Sapphire and SiC Substrates," IEEE Trans. Electron Devices, Nov. 2004.
Professional Societies
IEEE Fellow
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Last updated
10/14/2004
10/14/2004